Blf177 datasheet pdf
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RF Power Transistor Designed for. High power gain. Add To Download BLF Datasheet. the HF/ VHF HF/VHF power MOS transistor BLF FEATURES High power gain Low intermodulation distortion Easy power control Good thermal stability Withstands full Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor HF/VHF power MOS transistor BLF FEATURES High power gain Low intermodulation distortion Easy power control Good thermal stability Withstands full load mismatch Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. High efficiencyBLF Product details. Low intermodulation distortion. the HF/ VHF frequency range HF/VHF power MOS transistor BLF FEATURES •High power gain •Low intermodulation distortion •Easy power control •Good thermal stability •Withstands full load mismatch. RF Power Transistor Designed for. Withstands full load mismatch. Lowintermodulation distortion. APPLICATIONS •Designedforindustrialandmilitary applications in the HF/VHF frequency range. Enhancement-Mode. HF/VHF power MOS transistor BLF FEA TURES. Enhancement-Mode. High power gain. FEATURES. MOSFET. All leads are isolated from the flange NXP Semiconductors Product specification. APPLICA TIONS Download the BLF datasheet from NXP Semiconductors. industrial and military applications in. Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. Compare Product. Low intermodulation distortion. High power gain. FEATURES. BLF Datasheet (PDF) ECAD Model: Download the free Library Loader to convert this file for your ECAD Tool. Part: BLF Description: HF/VHF power MOS transistor. Manufacturer: NXP Semiconductors General descriptionW plastic LDMOS power transistor for base station applications at frequencies from MHz to MHz. Features and benefits. Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. High power gain. FEATURES. APPLICATIONS •Designed for industrial and military applications in the HF/VHF frequency range. Easy power control. Easy power control DESCRIPTION: The. ASI BLF is a N-Channel. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor HF/VHF power MOS transistor BLF FEATURES •High power gain •Low intermodulation distortion •Easy power control •Good thermal stability •Withstands full load mismatch. Low intermodulation distortion. MOSFET. Easy power control The transistor is encapsulated in a NXP Semiconductors Product specification. HF/VHF power MOS transistor BLF FEA TURES. High power gain. Learn more about ECAD Model. Trans RF MOSFET N-CH VAPin CRFM Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. File SizeKbytes. DESCRIPTION. The transistor is encapsulated in alead, SOT flange envelope, with a ceramic cap. Easy power control. Good thermal stability. industrial and military applications in. Genuine Component Product · Authorized Distributors · Millions Electronic Parts HF/VHF power MOS transistor BLF FEATURES •High power gain •Low intermodulation distortion •Easy power control •Good thermal stability •Withstands full load mismatch DESCRIPTION: The. ASI BLF is a N-Channel.